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2SC5785
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5785
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
• • • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) Industrial Applications Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10 s DC DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg Rating 20 10 7 2.0 3.5 200 2.0 1.0 150 −55 to 150 Unit V V V A mA W °C °C
JEDEC JEITA TOSHIBA
― SC-62 2-5K1A
Weight: 0.05 g (typ.
2SC5785 Datasheet
