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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5810
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5810
Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
DC t = 10 s
Junction temperature
Storage temperature range
VCBO
100
V
VCEX
80
V
VCEO
50
VEBO
7
V
IC
1.0
A
ICP
2.0
IB
0.1
A
2.0
PC (Note 1)
W
1.
2SC5810 Datasheet
