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2SC5819
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5819
High-Speed Switching Applications DC-DC Converter Applications
Industrial Applications Unit: mm
• High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
t = 10 s DC
Junction temperature
Storage temperature range
VCBO
40
V
VCEX
30
V
VCEO
20
V
VEBO
7
V
IC
1.5
A
ICP
2.5
IB
150
mA
2.0
PC (Note 1)
W
1.
2SC5819 Datasheet
