2SD1508
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
- High DC current gain: h FE = 4000 (min) (VCE = 2 V, IC = 150 m A)
- Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
Tj Tstg
30 30 10 1.5 3.0 50 1.2 10 150
- 55 to 150
A m A
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the...
