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2SD1509
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD1509
Micro-Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 80 V
Collector-emitter voltage
VCEO 80 V
Emitter-base voltage
VEBO 8 V
Collector current
IC 2 A
Base current
IB 0.5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.5 W
10
JEDEC JEITA
― ―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.
2SD1509 Datasheet
