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2SD2206
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2206
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
100 100
8 2 3 0.5 900 150 −55 to 150
V V V
A
A mW °C °C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.
2SD2206 Datasheet
