2SD2206
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
- High DC current gain: h FE = 2000 (min) (VCE = 2 V, IC = 1 A)
- Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 m A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB PC Tj Tstg
100 100
8 2 3 0.5 900 150
- 55 to 150
A m W °C °C
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if...
