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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SD2257
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
2SD2257
Unit: mm
• High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
100 100
8 ±3 ±5 0.3 2.0 20 150 −55 to 150
V V V
A
A
W
°C °C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g.
2SD2257 Datasheet
