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2SD2257 Datasheet

The 2SD2257 is a Silicon NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SD2257
ManufacturerToshiba
Overview TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SD2257 Unit: mm • High DC current gain: hFE = 2000 (min) • Low s. ture/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimat.
Part Number2SD2257
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain : hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Complement to Type 2SB1495 ·Minimum Lot-to-Lot variations for robust de. TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 1.5A; IB= 1.5mA ICBO Collector Cutoff Current VCB= 100V.
Part Number2SD2257
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·High DC current gain ·Low saturation voltage ·Complement to type 2SB1495 ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications. or-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=10mA ;IB=0 IC=1.5A ;IB=1.5mA IC=1.5A ;IB=1.5mA VCB=100V ;IE=0 VEB=8V; IC=0 IC=1A ; VCE=2V IC=2A ; VCE=2V IE=1A 0.8 2000 .