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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 1.5A ·High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V ·Complement to Type 2SB1495 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power switching applications ·Hammer drive, pulse motor drive applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
5
A
IB
Base Current-Continuous
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
0.3
A
20 W
2.