2SD2256 Overview
hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications. VCE= 4V 2000 20000 hFE-2 DC Current Gain IC= 25A.
2SD2256 Datasheet
| Part number | 2SD2256 |
|---|---|
| Datasheet | 2SD2256 Datasheet (PDF) |
| File Size | 71.94 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Darlington Power Transistor |
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