Datasheet Summary
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V
- High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min)
APPLICATIONS
- Designed for low frequency power amplifier...
