Datasheet Details
| Part number | 2SD2250 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.04 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD2250-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2250 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.04 KB |
| Description | Silicon NPN Darlington Power Transistor |
| Datasheet | 2SD2250-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) ·plement to Type 2SB1490 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 12 A 3.5 W 90 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2250 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2250 | Silicon NPN Transistor | Panasonic Semiconductor |
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