2SD2250 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage-.
2SD2250 is Silicon NPN Darlington Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SD2250 | Silicon NPN Transistor |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage-.