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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2604
2SD2604
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 95 V
Collector-emitter voltage
VCEO
110 ± 15
V
Emitter-base voltage
VEBO 5 V
Collector current
DC Pulse
IC
5 A
ICP 10
Base current
IB 0.7 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g.
2SD2604 Datasheet
