2SJ168
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
High Speed Switching Applications Analog Switch Applications Interface Applications
Unit: mm
- Excellent switching time: ton = 14 ns (typ.)
- High forward transfer admittance: |Yfs| = 100 m S (min)
@ID =
- 50 m A
- Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID =
- 50 m A
- Enhancement-mode
- plementary to 2SK1062
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDSS VGSS
ID IDP PD Tch Tstg
- 60
±20
- 200 m A
- 800
200 m W
°C
- 55 to 150
°C
JEDEC
―
JEITA
SC-59...
