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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168
High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ168
Unit: mm
• Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min)
@ID = −50 mA • Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID = −50 mA • Enhancement-mode • Complementary to 2SK1062
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
VDSS VGSS
ID IDP PD Tch Tstg
−60
V
±20
V
−200 mA
−800
200
mW
150
°C
−55 to 150
°C
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.
2SJ168 Datasheet
