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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ167
High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ167
Unit: mm
• Excellent switching time: ton = 14 ns (typ.) • High forward transfer admittance: |Yfs| = 100 mS (min) • Low on resistance: RDS (ON) = 1.3 Ω (typ.) • Enhancement-mode
• Complementary to 2SK1061
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS −60 V
Gate-source voltage
VGSS ±20 V
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
ID IDP PD Tch Tstg
−200 −800 300 150 −55~150
mA
mW °C °C
JEDEC JEITA TOSHIBA
― ― 2-4E1E
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 0.
2SJ167 Datasheet
