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2SJ163 Datasheet P-channel MOSFET

Manufacturer: Panasonic

Overview: Silicon Junction FETs (Small Signal) 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 0.65±0.15 +0.2 unit: mm 0.65±0.15 2.8 –0.3 1.5 –0.05 +0.

2SJ163 datasheet preview

Datasheet Details

Part number	2SJ163
Manufacturer	Panasonic
File Size	31.76 KB
Description	P-Channel MOSFET
Datasheet	2SJ163_PanasonicSemiconductor.pdf

Key Features

2.9.
0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4.
0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65.
20.
10 150 150.
55 to +150 Unit 0.8 2 1.45 V mA mA mW °C °C +0.2 1.1.
0.1 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini.

More Datasheets from Panasonic

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