q Low ON-resistance q Low-noise characteristics
unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65.
20.
10 300 150.
55 to +150 Unit V mA mA mW °C °C
1.27 1.27 1 2 3
2.0±0.2
marking
+0.2 0.45.
0.1
2.54±0.15
1: Source 2: Gate 3: Drain EIAJ: SC-72 New S Type Package
s Electric.
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Silicon Junction FETs (Small Signal)
2SJ164
Silicon P-Channel Junction FET
For switching Complementary to 2SK1104 s Features
q Low ON-resistance q Low-noise characteristics
unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65 −20 −10 300 150 −55 to +150 Unit V mA mA mW °C °C
1.27 1.27 1 2 3
2.0±0.2
marking
+0.2 0.45–0.1
2.54±0.
2SJ164 Datasheet
