VBsemi Electronics 2SJ168
P-Channel MOSFET
| Part No. | 2SJ168 |
|---|---|
| Datasheet | 2SJ168 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● High-Side Switching
● Low On-Resistance: 3
● Low Threshold: - 2 V (typ.)
● Fast Swtiching Speed: 20 ns (typ.)
● Low Input Capacitance: 20 pF (typ.)
● Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G1 S2 3D S G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Currentb Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range TA = 25 °C TA = 100 °C TA = 25 °C TA = 100 °C VDS VGS ID IDM PD RthJA TJ, Tstg Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Limit - 60 ± 20 - 500 - 350 -1500 460 240 350 - 55 to 150 Unit V mA mW °C/W °C 1 2SJ168 SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Min. Typ.a Max. Unit Static Drain-Source Breakdown Vol...
