2SJ168
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- High-Side Switching
- Low On-Resistance: 3
- Low Threshold:
- 2 V (typ.)
- Fast Swtiching Speed: 20 ns (typ.)
- Low Input Capacitance: 20 p F (typ.)
- pliant to Ro HS Directive 2002/95/EC
TO-236 (SOT-23)
G1 S2
3D
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Currenta Pulsed Drain Currentb
Power Dissipationa Maximum Junction-to-Ambienta Operating Junction and Storage Temperature Range
TA = 25 °C TA = 100 °C
TA = 25 °C TA = 100 °C
VDS VGS ID IDM
Rth JA TJ, Tstg
Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature.
Limit
- 60 ± 20
- 500
- 350 -1500 460 240 350
- 55 to 150
Unit V m A m W °C/W
°C
.VBsemi.
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Limits Min. Typ.a Max....
