2SJ168 Overview
2SJ168 P-Channel 60 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () - 60 3 at VGS = - 10 V VGS(th) (V) - 1 to - 3 ID (mA) -500.
2SJ168 Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- High-Side Switching
- Low On-Resistance: 3
- Low Threshold
- 2 V (typ.)
- Fast Swtiching Speed: 20 ns (typ.)
- Low Input Capacitance: 20 pF (typ.)
- pliant to RoHS Directive 2002/95/EC
