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2SJ349
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ349
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON-resistance : RDS (ON) = 33 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 20 S (typ.)
z Low leakage current
: IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.8 to −2.
2SJ349 Datasheet
