The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SJ619
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ619
Switching Regulator and DC-DC Converter Applications Motor Drive Applications
Unit: mm
• 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.) • Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) • Enhancement mode: Vth = −0.8 to −2.
2SJ619 Datasheet
