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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ103
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ103
Unit: mm
• High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) • Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) • Complimentary to 2SK246
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
VGDS IG PD Tj Tstg
50
V
−10
mA
300
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
TO-92
high temperature/current/voltage and the significant change in temperature, etc.
2SJ103 Datasheet
