Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Low Noise Audio Amplifier Applications
Unit: mm
- Remended for first stages of EQ amplifiers and MC head amplifiers.
- High |Yfs|: |Yfs| = 22 mS (typ.) (VDS =
- 10 V, VGS = 0, IDSS =
- 3 mA)
- Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS =
- 10 V, ID =
- 1 mA, f = 1 kHz)
- High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
- plementary to 2SK370
- Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
25 -10 200 125 -55~125
Electrical Characteristics (Ta =...