Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
Unit: mm
- High breakdown voltage: VGDS = 50 V
- High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
- Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS =
- 5 mA)
- plimentary to 2SK330
- Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
50 -10 200 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1B
Weight: 0.13 g...