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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ105
For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
2SJ105
Unit: mm
· High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) · Complimentary to 2SK330 · Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
50 -10 200 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1B
Weight: 0.13 g (typ.
2SJ105 Datasheet
