2SJ74
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Low Noise Audio Amplifier Applications
Unit: mm
- Remended for first stages of EQ amplifiers and M.C. head amplifiers.
- High |Yfs|: |Yfs| = 22 m S (typ.) (VDS =
- 10 V, VGS = 0, IDSS =
- 3 m A)
- Low noise: En = 0.95 n V/Hz1/2 (typ.) (VDS =
- 10 V, ID =
- 1 m A, f = 1 k Hz)
- High input impedance: IGSS = 1.0 n A (max) (VGS = 25 V)
- plimentary to 2SK170
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS 25 V
Gate current
- 10 m A
Drain power dissipation Junction temperature
PD 400 m W
JEDEC
TO-92
Tj 125 °C
Storage temperature range
Tstg
- 55~125
°C
JEITA
SC-43
Note: Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-5F1D high temperature/current/voltage and the significant change in
Weight: 0.21 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions...
