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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ74
2SJ74
Low Noise Audio Amplifier Applications
Unit: mm
• Recommended for first stages of EQ amplifiers and M.C. head amplifiers.
• High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA)
• Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz)
• High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Complimentary to 2SK170
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS 25 V
Gate current
IG −10 mA
Drain power dissipation Junction temperature
PD 400 mW
JEDEC
TO-92
Tj 125 °C
Storage temperature range
Tstg
−55~125
°C
JEITA
SC-43
Note: Using continuously under heavy loads (e.g.
2SJ74 Datasheet
