• Part: 2SJ72
  • Description: Silicon P-Channel Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 115.11 KB
Download 2SJ72 Datasheet PDF
Toshiba
2SJ72
FEATURES . Remended for first stages of EQ Amplifiers and M.C. Head Amplifiers. - High jy fs ) : |yfsl=40m S(Typ.)(VDS =-10V, VGS=0, IDSS=-5m A) . Low Noise : NF=1.0d B (Typ.) (VDS =-10V, ID=-5m A, f=lk Hz, Rg=100ft) . High Input Impedance : I GSS =ln A (Max.) (V GS=25V) . High Drain Power Dissipation : PD=600m W . plementary to 2SK147 Unit in mm Z54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vgds IG PD T Tstg RATING UNIT -10 m A 600 m W °C -55^125 °C . OIIL-IUI -1 1. DRAIN S 2. GATE d 3. SOURCE T0-92M0D EIAJ 2-5 JIB Weight : 0.36g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gate Leakage Current Gate-Drain Breakdown Voltage IGSS V(BR)GDS Drain Current Gate-Source Cut-off Voltage Idss (Note)n VGS(OFF) For-ard Transfer Admittance lyfsi Input Capacitance Reverse Transfer Capacitance Ciss Crss Noise Figure NF(1) NF(2) TEST CONDITION VGS...