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2SJ72 - Silicon P-Channel Transistor

Key Features

  • . Recommended for first stages of EQ Amplifiers and M. C. Head Amplifiers.
  • High jy fs ) : |yfsl=40mS(Typ. )(VDS =-10V, VGS=0, IDSS=-5mA) . Low Noise : NF=1.0dB (Typ. ) (VDS =-10V, ID=-5mA, f=lkHz, Rg=100ft) . High Input Impedance : I GSS =lnA (Max. ) (V GS=25V) . High Drain Power Dissipation : PD=600mW . Complementary to 2SK147 Unit in mm Z54.

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Datasheet Details

Part number 2SJ72
Manufacturer Toshiba
File Size 115.11 KB
Description Silicon P-Channel Transistor
Datasheet download datasheet 2SJ72 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON P CHANNEL JUNCTION TYPE 2SJ72 LOW NOISE AUDIO AMPLIFIER APPLICATIONS. FEATURES . Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. • High jy fs ) : |yfsl=40mS(Typ.)(VDS =-10V, VGS=0, IDSS=-5mA) . Low Noise : NF=1.0dB (Typ.) (VDS =-10V, ID=-5mA, f=lkHz, Rg=100ft) . High Input Impedance : I GSS =lnA (Max.) (V GS=25V) . High Drain Power Dissipation : PD=600mW . Complementary to 2SK147 Unit in mm Z54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL vgds IG PD T J Tstg RATING UNIT 25 V -10 mA 600 mW 125 °C -55^125 °C . OIIL-IUI -1 1. DRAIN S 2. GATE d 3. SOURCE T0-92M0D EIAJ 2-5 JIB Weight : 0.