2SJ75 - Silicon P-Channel Transistor

Toshiba

Key Features

Recommended for first stages of EQ Amplifiers.
High ]y fs l : ly fs l=22mS(Typ. ).
Excellent Pair Characteristics : | Vc-Sl " Vr-S2 = I 20mV (Max. ) (Vds=-10V, lD=-lmA).
Low Noise : en = .95nV IViz (Typ. ) (VDS = -10V, ID = -1mA, f = 1kHz).
High Input Impedance : Iqss = ^- n^ (Max. ) (V G S=25V).
Complementary to 2SK240.

2SJ75 silicon p-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SJ75
Manufacturer	Toshiba
File Size	135.37 KB
Description	Silicon P-Channel Transistor
Datasheet	2SJ75 Datasheet

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2SJ75 SILICON P CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Recommended for first stages of EQ Amplifiers. • High ]y fs l : ly fs l=22mS(Typ.) • Excellent Pair Characteristics : | Vc-Sl " Vr-S2 = I 20mV (Max.) (Vds=-10V, lD=-lmA) • Low Noise : en = .95nV IViz (Typ.) (VDS = -10V, ID = -1mA, f = 1kHz) • High Input Impedance : Iqss = ^- n^ (Max.) (V G S=25V) • Complementary to 2SK240 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG PD T.i Tstg RATING 25 -10 400 *2 125 -55^125 UNIT V mA mW °C °C 6.4MAX Unit : mm ^4 5 6„ 123 1. SOURCE I 2. GATE 1 3. DRAIN 1 JEDEC 4. DRAIN 2 5. GATE 2 6.