• Part: 2SJ111
  • Description: Silicon P-Channel Transistor
  • Manufacturer: Toshiba
  • Size: 108.50 KB
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Datasheet Summary

SILICON f CHANNEL JUNCTION TYPE FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS. Features . Remended for First Stages of EQ Amplifier and MC Head Amplifiers. . High lY fs l : |Yf s ]=40mS(Typ.) (VDS =-10V, VGS =0, I D SS=-5mA) . Low Noise : NF=1. OdB(Typ. (VDS =-10V, I D=-5mA, f=lkHz, Rg =100Q) . High Input Impedance : lGSS=lnA(Max. ) (Vdg=-25V) . plementary to 2SK369 Unit in mm 51 MAX . MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range VGDS IG PD r stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gate-Source Cut-off Current IGSS Gate...