2SJ111 - Silicon P-Channel Transistor

Toshiba

Key Features

. Recommended for First Stages of EQ Amplifier and MC Head Amplifiers. . High lY fs l : |Yf s ]=40mS(Typ. ) (VDS =-10V, VGS =0, I D SS=-5mA) . Low Noise : NF=1. OdB(Typ. (VDS =-10V, I D=-5mA, f=lkHz, Rg =100Q) . High Input Impedance : lGSS=lnA(Max. ) (Vdg=-25V) . Complementary to 2SK369 Unit in mm 51 MAX . 1.27 1.27.

2SJ111 silicon p-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SJ111
Manufacturer	Toshiba
File Size	108.50 KB
Description	Silicon P-Channel Transistor
Datasheet	2SJ111 Datasheet

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SILICON f CHANNEL JUNCTION TYPE 2SJ111 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS. FEATURES . Recommended for First Stages of EQ Amplifier and MC Head Amplifiers. . High lY fs l : |Yf s ]=40mS(Typ.) (VDS =-10V, VGS =0, I D SS=-5mA) . Low Noise : NF=1. OdB(Typ. (VDS =-10V, I D=-5mA, f=lkHz, Rg =100Q) . High Input Impedance : lGSS=lnA(Max. ) (Vdg=-25V) . Complementary to 2SK369 Unit in mm 51 MAX . 1.27 1.27 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range VGDS IG PD r stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gate-Source Cut-off Current IGSS Gate-Drain Breakdown Voltage V(BR)GDS 25 -10 400 1. DRAIN mA 2. GATE 3.