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2SJ668
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOSIII)
2SJ668
Relay Drive, DC/DC Converter and Motor Drive Applications
z 4 V gate drive z Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) z High forward transfer admittance: |Yfs| = 5.0 S (typ.) z Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) z Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
1.5 ± 0.2
6.5 ± 0.2 5.2 ± 0.2
Unit: mm
0.6 MAX.
5.5 ± 0.2 9.5 ± 0.3
1.2 MAX.
0.8 MAX. 0.6 ± 0.15
1
1.05 MAX. 23
1.1 ± 0.2 0.6 MAX.
2.3 ± 0.2 0.1 ± 0.
2SJ668 Datasheet
