2SJ73 - Silicon P-Channel Transistor

Toshiba

Key Features

Recommended for first stages of EQ Amplifiers and M. C. Head Amplifiers.
High ]yf s | : lyfsl=40mS(Typ. ) (VDS.
10V, VGS=0, I DSS =-5mA).
Excellent Pair Characteristics : |VGSl-VGS2l =2 0mV (Max. ).
(VDS 10V, I D 5mA).
Low Noise : NF=1.0dB (Typ. ) (VDS=-10V, I D=-5mA, f=lkHz, Rg=100ft).
High Input Impedance : IcsS=lnA (Max. (V GS=25V).
Complementary to 2SK146.

2SJ73 silicon p-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SJ73
Manufacturer	Toshiba
File Size	132.20 KB
Description	Silicon P-Channel Transistor
Datasheet	2SJ73 Datasheet

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2SJ73 SILICON P CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS- FEATURES • Recommended for first stages of EQ Amplifiers and M.C. Head Amplifiers. • High ]yf s | : lyfsl=40mS(Typ.) (VDS— 10V, VGS=0, I DSS =-5mA) • Excellent Pair Characteristics : |VGSl-VGS2l =2 0mV (Max.) — — (VDS 10V, I D 5mA) • Low Noise : NF=1.0dB (Typ.) (VDS=-10V, I D=-5mA, f=lkHz, Rg=100ft) • High Input Impedance : IcsS=lnA (Max. (V GS=25V) • Complementary to 2SK146 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG PD Ti [stg. RATING 25 -10 600x2 125 -55^125 UNIT V mA mW Unit in mm &4MAX. DRAIN MARK^,^"" 123 JL SOURCE 1 2. GATE 1 a DRA IN 1 4.