2SJ73
2SJ73 is Silicon P-Channel Transistor manufactured by Toshiba.
FEATURES
- Remended for first stages of EQ Amplifiers and
M.C. Head Amplifiers.
- High ]yf s | : lyfsl=40m S(Typ.)
(VDS- 10V, VGS=0, I DSS =-5m A)
- Excellent Pair Characteristics
: |VGSl-VGS2l =2 0m V (Max.)
- - (VDS 10V, I D 5m A)
- Low Noise : NF=1.0d B (Typ.)
(VDS=-10V, I D=-5m A, f=lk Hz, Rg=100ft)
- High Input Impedance : Ics S=ln A (Max.
(V GS=25V)
- plementary to 2SK146
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VGDS IG PD Ti
[stg.
RATING
25 -10 600x2
-55^125
UNIT V m A m W
Unit in mm
&4MAX. DRAIN MARK^,^""
123 JL SOURCE 1 2. GATE 1 a DRA IN 1
4. DRAIN 2 5. GATE 2 6. SOURCE 2
JEDEC
EIAJ TOSHIBA
- 6E IB
Weight : l.lg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC Gate Leakage Current
SYMBOL
TEST CONDITION
IGSS VGS=25V, VDS =0
MIN. TYP. MAX. UNIT
- - 1.0 n A
Gate-Drain Breakdown Voltage
V (BR)GDS VDS=0» Ig=1'00...
