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2SK1381
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII)
2SK1381
Relay Drive, Motor Drive and DC−DC Converter Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON-resistance : RDS (ON) = 25 mΩ (typ.)
z High forward transfer admittance : |Yfs| = 33 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)
z Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS 100 V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate−source voltage
VGSS ±20 V
Drain current
DC (Note 1) Pulse (Note 1)
ID IDP
50 A
200
1. GATE 2. DRAIN (HEAT SINK) 3.
2SK1381 Datasheet
