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2SK1529
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1529
High Power Amplifier Application
l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDSS = 180V : |Yfs| = 4.0 S (typ.) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Gate−source voltage Drain current (Note 1) Symbol VDSS VGSS ID PD Tc Tstg Rating 180 ±20 10 120 150 −55~150 Unit V V A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range
Marking
Type
※ Lot Number Month (starting from alphabet A) Year (last number of the christian era)
JEDEC JEITA TOSHIBA
― ― 2-16C1B
K1529
※
Weight: 4.6 g (typ.
2SK1529 Datasheet
