| Part Number | 2SK1529 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SK1529 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1529 High Power Amplifier Application l High breakdown voltage l High forward transfer admittance l Complementary to 2SJ200 : VDS. er capacitance Symbol IDSS IGSS V (BR) DSS VDS (ON) VGS (OFF) |Yfs| Ciss Coss Crss Test Condition VDS = 180 V, VGS = 0 VDS = 0, VGS = ±20 V ID = 10 mA, VGS = 0 ID = 6 A, VGS = 10 V VDS = 10 V, ID = 0.1 A VDS = 10 V, ID = 3 A VDS = 30 V, VGS = 0, f = 1 MHz VDS = 30 V, VGS = 0, f = 1 MHz VDD ≈ 30 V, V. |
2SK1529 Datasheet and Specifications PDF
The 2SK1529 is a Silicon N-Channel MOSFET.
| Part Number | 2SK1529 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 180V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High B. orward Voltage ID= 6A; VGS= 10V 2SK1529 MIN MAX UNIT 180 V 0.8 2.8 V ±500 nA 1 mA 5.0 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicatio. |