2SK2013 - Silicon N Channel MOS Type Field Effect Transistor

Toshiba

Datasheet Details

Part number	2SK2013
Manufacturer	Toshiba
File Size	258.89 KB
Description	Silicon N Channel MOS Type Field Effect Transistor
Datasheet	2SK2013 Datasheet

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2013 2SK2013 Audio Frequency Power Amplifier Application z High breakdown voltage z High forward transfer admittance z Complementary to 2SJ313 : VDSS = 180V : |Yfs| = 0.7 S (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage Gate−source voltage Drain current (Note 2) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range VDSS VGSS ID PD Tch Tstg 180 ±20 1 25 150 −55 to 150 V V A W °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.