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2SK208
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK208
General Purpose and Impedance Converter and Condenser Microphone Applications
• High breakdown voltage: VGDS = −50 V • High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V) • Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) • Small package.
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
−50 10 100 125 −55~125
Unit
V mA mW °C °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
2SK208 Datasheet
