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2SK2399

Manufacturer: Toshiba
2SK2399 datasheet preview

Datasheet Details

Part number 2SK2399
Datasheet 2SK2399_ToshibaSemiconductor.pdf
File Size 266.80 KB
Manufacturer Toshiba
Description N-Channel MOSFET
2SK2399 page 2 2SK2399 page 3

2SK2399 Overview

2SK2399 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2399 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.17 Ω (typ.) l High forward transfer admittance.

2SK2399 Key Features

  • 4 V gate drive
  • Low drain−source ON resistance : RDS (ON) = 0.17 Ω (typ.)
  • High forward transfer admittance : |Yfs| = 4.5 S (typ.)
  • Low leakage current : IDSS = 100 µA (max) (VDS = 100 V)
  • Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drai
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