2SK2467 Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 4.0 S (typ.) Unit:.
2SK2467 Datasheet
| Part number | 2SK2467 |
|---|---|
| Download | 2SK2467 Datasheet (PDF) |
| File Size | 101.89 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
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