2SK2467 Overview
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 4.0 S (typ.) Unit:.
Datasheet Details
| Part number | 2SK2467 |
|---|---|
| Datasheet | 2SK2467_ToshibaSemiconductor.pdf |
| File Size | 101.89 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
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