Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
Unit: mm
- High breakdown voltage: VGDS =
- 50 V
- High input impedance: IGSS =
- 1 nA (max) (VGS =
- 30 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
Symbol
VGDS IG PD Tj Tstg
Rating
-50 10 300 125 -55~125
Unit
V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current Gate-drain...
