K2467 Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 4.0 S (typ.) Unit:.
- Part: K2467
- Manufacturer: Toshiba
- Size: 101.89 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| k246 | Silicon N-Channel Junction Type Field Effect Transistor |
| K2466 | 2SK2466 |
| K241 | 2SK241 |