Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
FM Tuner, VHF and RF Amplifier Applications
Unit: mm
- Low reverse transfer capacitance: Crss = 0.035 pF (typ.)
- Low noise figure: NF = 1.7dB (typ.)
- High power gain: GPS = 28dB (typ.)
- Remend operation voltage: 5~15 V
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
VDS VGS
ID PD Tch Tstg
Rating
20 ±5 30 200 125
- 55~125
Unit
V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1D
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test...
