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2SK2411 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.

(in millimeter) 10.6 MAX.

5.9 MIN.

Key Features

  • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3.
  • Low Ciss Ciss = 1500 pF TYP.
  • Built-in G-S Gate Protection Diodes.
  • High Avalanche Capability Ratings.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2411-Z SWITCHING N-CHANNEL POWER MOSFET
2SK1749 Switching N-Channel Power MOS FET
2SK3570 Switching N-Channel MOSFET
2SK3571 Switching N-Channel MOSFET
2SK3572 Switching N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 3.6 ±0.2 4.8 MAX. 1.3 ±0.2 FEATURES • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3 • Low Ciss Ciss = 1500 pF TYP.