Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
3.0 ±0.3
PACKAGE DIMENSIONS
(in millimeter) 10.6 MAX. 10.0
5.9 MIN. 12.7 MIN. 15.5 MAX.
3.6 ±0.2
4.8 MAX. 1.3 ±0.2
Features
- Low On-Resistance
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3
- Low Ciss Ciss = 1500 pF TYP.
- Built-in G-S Gate Protection Diodes
- High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document...