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2SK2411-Z - SWITCHING N-CHANNEL POWER MOSFET

Download the 2SK2411-Z datasheet PDF. This datasheet also covers the 2SK2411 variant, as both devices belong to the same switching n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.

(in millimeter) 10.6 MAX.

5.9 MIN.

Key Features

  • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3.
  • Low Ciss Ciss = 1500 pF TYP.
  • Built-in G-S Gate Protection Diodes.
  • High Avalanche Capability Ratings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SK2411_NECElectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
2SK241 Silicon N-Channel MOSFET Toshiba Semiconductor
2SK2410 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK2412 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK2413 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK2414 SWITCHING N-CHANNEL POWER MOSFET NEC

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2411 SWITCHING N-CHANNEL POWER MOSFET
2SK1749 Switching N-Channel Power MOS FET
2SK3570 Switching N-Channel MOSFET
2SK3571 Switching N-Channel MOSFET
2SK3572 Switching N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 3.6 ±0.2 4.8 MAX. 1.3 ±0.2 FEATURES • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3 • Low Ciss Ciss = 1500 pF TYP.