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2SK2410 - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.

Key Features

  • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) 15.0 ±0.3 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A).
  • Low Ciss Ciss = 1500 pF TYP.
  • High Avalanche Capability Ratings.
  • Built-in G-S Gate Protection Diodes.

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📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2412 SWITCHING N-CHANNEL POWER MOSFET
2SK2413 SWITCHING N-CHANNEL POWER MOSFET
2SK2414 SWITCHING N-CHANNEL POWER MOSFET
2SK2414-Z SWITCHING N-CHANNEL POWER MOSFET
2SK2415 SWITCHING N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2 FEATURES • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) 15.0 ±0.3 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN. RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) • Low Ciss Ciss = 1500 pF TYP. • High Avalanche Capability Ratings • Built-in G-S Gate Protection Diodes QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 0.