Datasheet Summary
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2412 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS
(in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
Features
- Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 10 A)
15.0 ±0.3 3 ±0.1 4 ±0.2 12.0 ±0.2 13.5 MIN.
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 10 A)
- Low Ciss Ciss = 860 pF TYP.
- Built-in G-S Gate Protection Diodes
- High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC...