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2SK2415-Z - SWITCHING N-CHANNEL POWER MOSFET

General Description

The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

0.1 6.5 ± 0.2 2.3 ± 0.2 0.5 ± 0.1

Key Features

  • 1.6 ± 0.2 5.0 ± 0.2 4 RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A) 1 2 3.
  • Low Ciss Ciss = 570 pF TYP. 1.3 MAX.

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Other Datasheets by NEC (now Renesas Electronics)

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2SK2415 SWITCHING N-CHANNEL POWER MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2415 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) + 0.2 1.5 – 0.1 6.5 ± 0.2 2.3 ± 0.2 0.5 ± 0.1 FEATURES 1.6 ± 0.2 5.0 ± 0.2 4 RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A) RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A) 1 2 3 • Low Ciss Ciss = 570 pF TYP. 1.3 MAX. QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 2.3 2.3 7.0 MAX. 5.5 ± 0.2 13.7 MIN. • Low On-Resistance 0.6 ± 0.1 0.