• Part: 2SK2733
  • Description: Silicon N-Channel MOS Type Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 252.48 KB
Download 2SK2733 Datasheet PDF
Toshiba
2SK2733
2SK2733 is Silicon N-Channel MOS Type Field Effect Transistor manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π- MOSIII) Chopper Regulator, DC- DC Converter and Motor Drive Applications Unit: mm l Low drain- source ON resistance : RDS (ON) = 8.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 0.9 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement- mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 m A) Maximum Ratings (Ta = 25°C) Characteristics Drain- source voltage Drain- gate voltage (RGS = 20 kΩ) Gate- source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD IAR EAR Tch Tstg Rating 900 900 ±30 1 3 60 1 6.0 150 - 55~150 Unit V V V W m J A m J °C °C JEDEC TO-220AB JEITA SC-46 TOSHIBA 2-10P1B Weight: 2.0 g (typ.) Thermal Characteristics Characteristics...