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2SK2719 - N-Channel MOS Type Field Effect Transistor

Key Features

  • failure of which may cause loss of human life, bodily injury, s.

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Datasheet Details

Part number 2SK2719
Manufacturer Toshiba
File Size 268.75 KB
Description N-Channel MOS Type Field Effect Transistor
Datasheet download datasheet 2SK2719 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics S Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) V Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) ymbol VDSS DGR Rating 900 900 ±30 3 Unit V V V 1. Gate 2. Drain (heat sink) 3. Source VGSS ID IDP PD EAS IAR (Note 3) EAR Tch Tstg A 9 125 295 3 12.