2SK2715
2SK2715 is Power MOSFET manufactured by VBsemi.
FEATURES
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic d V/dt Ruggedness
Available
Ro HS-
PLIANT
- Fully Characterized Capacitance and Avalanche Voltage and Current
- pliant to Ro HS directive 2002/95/EC
TO-252
GDS Top View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery d V/dtc
TC = 25 °C
EAS IAR EAR PD d V/dt
Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)d for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 24 m H, RG = 25 Ω, IAS = 3.2 A (see fig. 12). c. ISD ≤ 3.2 A, d I/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Drain current limited by maximum junction temperature.
LIMIT 650 ± 30 4.5 4.2 18 0.48 325
4 6 60 2.8
- 55 to + 150 300 10 1.1
UNIT V
W/°C m J A m J W V/ns °C lbf
- in N- m
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THERMAL RESISTANCE...
