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2SK3316
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3316
Switching Regulator Applications
Fast reverse recovery time Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : trr = 60 ns (typ.) : RDS (ON) = 1.6 Ω (typ.) : |Yfs| = 3.8 S (typ.) Unit: mm
Built-in high-speed free-wheeling diode
: IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.
2SK3316 Datasheet
