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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3320
2SK3320
For Low Noise Audio Amplifier Applications
• Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) • High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS −50 V
Gate current
IG 10 mA
Drain power dissipation
PD (Note 1)
200
mW
JEDEC JEITA
― ―
Junction temperature Storage temperature range
Tj 125 °C
Tstg
−55 to 125
°C
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.
2SK3320 Datasheet
