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2SK3389
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3389
Switching Regulator, DC-DC Converter Applications Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) High forward transfer admittance: |Yfs| = 70 S (typ.) Low leakage current: IDSS = 100 µA (VDS = 30 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (Note 1) Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±30 75 A 300 125 731 75 12.
2SK3389 Datasheet
