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2SK3397
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS )
2SK3397
Relay Drive and DC-DC Converter Applications Motor Drive Applications
• • • • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) High forward transfer admittance: Yfs = 110 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Tc = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 30 30 ±20 70 210 125 273 70 12.
2SK3397 Datasheet
